Electric field-induced structural dynamics in MoS2 observed using in-situ transmission electron microscopy

Gatan instrument used

K3^® IS direct detection camera delivers simultaneous low-dose imaging via real-time electron counting, fast continuous data capture, and a large field of view.

Background

Grain boundaries and other defects enable tuning of electronic and optical properties of layered transition metal dichalcogenides like MoS₂. However, these grain boundaries may serve as sites for preferential heating and oxidation during device operation. It is ideal to observe and correlate these processes with properties via dynamic high-resolution techniques, such as in-situ TEM. By using the lowest possible electron dose rate, the contribution of the electron beam to the observed behavior is limited.